2020/05 : New Paper
- 관리자
- 2020년 7월 9일
- 1분 분량
최종 수정일: 2020년 7월 15일
A new paper based on a recent work by Changhwan, Jihyun and Prof. Cho is accepted in International Journal of Heat and Mass Transfer (title: "The Effect of GaN Epilayer Thickness on the Near-Junction Thermal Resistance of GaN-on-Diamond Devices")


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